The team used a modified commercial cryogenic hybrid LNA based on InP HEMTs characterised to demonstrate the feasibility of ...

PDI is an internationally recognised research institute with more than 30 years of expertise in MBE and semiconductor ...

Fraunhofer ISIT’s Power Electronics division (which develops prototypes for power electronic and sensor systems) will use ...

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Navitas Semiconductor, developer of GaNFast GaN and GeneSiC SiC power semiconductors, has been awarded the ‘Outstanding ...

The Compound Semiconductor Applications (CSA) Catapult will mobilise the new UK Semiconductor Centre (UKSC). This ...

Renesas says the restructuring agreement just signed with the US SiC chip firm Wolfspeed will result in a significant ...

But notably, OSCs with thinner active layers demonstrated better radiation resistance and more effective recovery after ...

To produce their mirrors by MOCVD, the team employed a temperature difference of just 150 °C between InGaN and the AlGaN/GaN ...

Wolfspeed has entered into a Restructuring Support Agreement (RSA)with key lenders, including holders of more than 97 percent ...

Toyota is using a power module equipped with Rohm's 4th generation SiC MOSFET bare chip in the traction inverter of its new ...

The resulting submicron LEDs, some as small as 250nm by 250nm, initially demonstrated promising electrical characteristics, ...